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Our beam switch could be applied to neutralise the ion beam and to control the beam power of each ion source in a lot of application processes, especially for reactive processes:

  • Ion Beam Etching (IBE), Ion Beam Milling (IBM)
  • Ion Beam Sputtering (IBS), Ion Beam Assisted Deposition (IBAD), Dual Ion Beam Deposition (DIBD)
  • Ion Beam Implantation (IBI)
  • Ion Beam Cleaning (IBC)


Our BS 20 is configured in a ½ 19” housing for installation in a 19” cabinet together with the power supplies. This is one of the most advantages of the BS 20 it’s easy way to integrate it in existing ion beam systems. Because there is no necessity to change anything at the vacuum system.

The BS 20 generates a synchronised switching of the beam and the accelerator potentials by using an internal oscillator. Due to the continuous plasma excitation of the ion source the plasma density is not influenced by the operating method of the beam switch. Therefore, a steady ion source operation is maintained independent of the pulsed mode operation.



 Technical Specifications


0.5 .. 20 kHz


up to 2 kHz                2% to 98%

up to 20 kHz   10% to 85%


Beam                          max.    2000 V

Accelerator                 max.  -2000 V


Beam                          max.    1 A

Accelerator                 max.    1 A

Capacitance of the connectors

Up to 500 pF

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